Heat of crystallization and melting point of amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94077
Reference15 articles.
1. Specific Heat and Heat of Crystallization of Amorphous Germanium
2. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
3. Kinetics of laser‐induced solid phase epitaxy in amorphous silicon films
4. Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSixalloys determined by scanning calorimetry
5. Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements
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