Kinetics of laser‐induced solid phase epitaxy in amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330561
Reference12 articles.
1. Direct observation of laser‐induced solid‐phase epitaxial crystallization by time‐resolved optical reflectivity
2. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
3. Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
4. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
5. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
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