Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88980
Reference6 articles.
1. The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
2. Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92,
3. Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal Si
4. Stacking Fault Nucleation in Epitaxial Silicon on Variously Oriented Silicon Substrates
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