Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323409
Reference4 articles.
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3. Microstructure of xenon−implanted silicon
4. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
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