In-situ TEM investigation of dislocation healing and recrystallization in nanoscratched silicon at elevated temperatures up to 800 °C-Reference-Cited by-同舟云学术

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In-situ TEM investigation of dislocation healing and recrystallization in nanoscratched silicon at elevated temperatures up to 800 °C

Published:2024-07 Issue: Volume:31 Page:1939-1944
ISSN:2238-7854
Container-title:Journal of Materials Research and Technology
language:en
Short-container-title:Journal of Materials Research and Technology

Author:

Li Zhen,Zhang Liangchi^ORCID

Publisher

Elsevier BV

Reference38 articles.

1. Atomic scale deformation in silicon monocrystals induced by two-body and three-body contact sliding;Zhang;Tribol Int,1998

2. Damage-free polishing of monocrystalline silicon wafers without chemical additives;Biddut;Scr Mater,2008

3. The difference of phase distributions in silicon after indentation with Berkovich and spherical indenters;Zarudi;Acta Mater,2005

4. Response of machining-damaged single-crystalline silicon wafers to nanosecond pulsed laser irradiation;Yan;Semicond Sci Tech,2007

5. Laser recovery of grinding-induced subsurface damage in the edge and notch of a single-crystal silicon wafer;Niitsu;Surf Topogr-Metrol,2019

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