Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference54 articles.
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5. High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3;Nishimura;Appl. Phys. Express,2011
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111);Journal of Applied Physics;2024-03-19
2. Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface;Nanomaterials;2023-01-04
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