Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping-Reference-Cited by-同舟云学术

Rapid thermal annealing characteristics of bulk AlInAs/InP and AlInAs/GaInAs/InP high electron mobility transistor structures with planar silicon doping

Published:1992-10-15 Issue:8 Volume:72 Page:3798-3802
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kiziloḡlu Kürşad,Hashemi Majid M.,Yin Lie‐Wei,Li Yuan Jing,Petroff Pierre M.,Mishra Umesh K.,Brown April S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.352277

Reference7 articles.

1. Wavelength modification of AlxGa1−xAs quantum well heterostructure lasers by layer interdiffusion

2. Selective interdiffusion of GaInAs/AlInAs quantum wells by SiO2encapsulation and rapid thermal annealing

3. Substrate misorientation effects on the structure and electronic properties of GaInAs‐AlInAs interfaces

4. Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures

5. The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE

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