Effect of rapid thermal annealing on planar‐doped pseudomorphic InGaAs high electron mobility transistor structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104897
Reference13 articles.
1. Band structure and charge control studies ofn‐ andp‐type pseudomorphic modulation‐doped field‐effect transistors
2. 60-GHz pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.28/Ga/sub 0.72/As low-noise HEMTs
3. High-gain W band pseudomorphic InGaAs power HEMTs
4. Stability of strained quantum-well field-effect transistor structures
5. Effect of heat treatment on InGaAs/GaAs quantum wells
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2. Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs—structural intactness with high-temperature annealing;Journal of Physics D: Applied Physics;2010-03-18
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4. Annealing effect on the optical properties in Si delta-doped Al0.24Ga0.76As/In0.15Ga0.85As/GaAs pseudomorphic high electron mobility transistor structures;Physica E: Low-dimensional Systems and Nanostructures;2003-09
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