Band structure and charge control studies ofn‐ andp‐type pseudomorphic modulation‐doped field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342545
Reference18 articles.
1. Persistent photoconductivity in AlGaAs–GaAs heterostructures
2. Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
3. Theoretical investigation of hole transport in strained III‐V semiconductors: Application to GaAs
4. p‐channel, strained quantum well, field‐effect transistor
5. High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors
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