High-gain W band pseudomorphic InGaAs power HEMTs-Reference-Cited by-同舟云学术

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High-gain W band pseudomorphic InGaAs power HEMTs

Published:1991-04 Issue:4 Volume:12 Page:149-150
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Streit D.C.,Tan K.L.,Dia R.M.,Liu J.K.,Han A.C.,Velebir J.R.,Wang S.K.,Trinh T.Q.,Chow P.-M.D.,Lui P.H.,Yen H.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/2525/00075746.pdf?arnumber=75746

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