Selective interdiffusion of GaInAs/AlInAs quantum wells by SiO2encapsulation and rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347194
Reference35 articles.
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3. CVD-SiO2 and plasma-SiNx films as Zn diffusion masks for GaAs
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5. High‐temperature annealing of the SiO2/GaAs system
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1. Optical properties of InGaAs/InAIAs diffused double quantum wells;Journal of Applied Physics;2000-03-15
2. Tailoring light and heavy holes of GaAsP-AlGaAs quantum wells by using interdiffusion for polarization-independent amplifier applications;IEEE Journal of Quantum Electronics;2000-02
3. Ion beam induced interdiffusion at the InGaAs/InAlAs interfaces;Ion Beam Modification of Materials;1996
4. Defect‐enhanced interdiffusion at the InGaAs/InAlAs interface due to Si ion implantation;Journal of Applied Physics;1994-03
5. Thermal stability of strained InxGa1−xAs/InyAl1−yAs/InP heterostructures;Applied Physics Letters;1993-08-23
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