Thermal stability of strained InxGa1−xAs/InyAl1−yAs/InP heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109800
Reference14 articles.
1. Defects in epitaxial multilayers
2. Very high electron mobility In0.8Ga0.2As heterostructure grown by molecular beam epitaxy
3. Mismatched InGaAs/InP and InAlAs/InP heterostructures with high crystalline quality
4. Comparison of device performance of highly strained Ga1−xInxAs/a10.48In0.52As (0.53 ≤ × ≤ 0.90) MODFETs
5. Doubly strained In/sub 0.41/Al/sub 0.59/As/n/sup +/-In/sub 0.65/Ga/sub 0.35/As HFET with high breakdown voltage
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2. GaAs- and InP-Based High-Electron-Mobility Transistors;Comprehensive Semiconductor Science and Technology;2011
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4. Dependence of the interband transitions on the in mole fraction and the applied electric field in InxGa1−xAs/In0.52Al0.48As multiple quantum wells;Applied Surface Science;2005-12
5. Enhancement of electron transfer efficiency of the pseudomorphic InxGa1−xAs/InyAl1−yAs asymmetric step quantum well due to delta modulation doping;Materials Chemistry and Physics;2004-01
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