High‐temperature annealing of the SiO2/GaAs system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89996
Reference4 articles.
1. OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
2. The Reaction of GaP(s) with H[sub 2]O(g) and the Range of Stability of GaP(s) under Pressures of Ga[sub 2]O and P2
3. Structural Evaluation of Silicon Oxide Films
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1. Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors;Rapid Thermal Processing of Semiconductors;1997
2. Oxidation enhanced diffusion of Si in GaAs: The effect of excess As on diffusion depth and carrier concentration;Applied Physics Letters;1995-07-17
3. Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices;MRS Proceedings;1992
4. Enhancement of SiO2/GaAs interface properties by electron cyclotron resonance plasma‐enhanced chemical vapor deposition and Ga outdiffusion control;Applied Physics Letters;1991-07
5. Selective interdiffusion of GaInAs/AlInAs quantum wells by SiO2encapsulation and rapid thermal annealing;Journal of Applied Physics;1990-11-15
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