OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653422
Reference6 articles.
1. Diffusion Measurements in the System Cu-Au by Elastic Scattering
2. A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING THE ION‐SCATTERING TECHNIQUE
3. Enhanced Diffusion and Out‐Diffusion in Ion‐Implanted Silicon
4. THE DETERMINATION OF SURFACE CONTAMINATION ON SILICON BY LARGE ANGLE ION SCATTERING
5. Vapor pressures and phase equilibria in the GaAs system
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