Optical properties of InGaAs/InAIAs diffused double quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372284
Reference28 articles.
1. Si-Induced Disordering of In0.53Ga0.47As/In0.52Al0.48As Multiquantum Well Structures
2. Indium diffusion in the chemical potential gradient at an In0.53Ga0.47As/In0.52Al0.48As interface
3. Modification of exciton emission energies in InGaAs/AlInAs quantum wells by rapid thermal annealing
4. Selective interdiffusion of GaInAs/AlInAs quantum wells by SiO2encapsulation and rapid thermal annealing
5. Compositional Disordering of In0.53Ga0.47As/In0.52Al0.48As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
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1. Largely extended light-emission shift of ZnSe nanostructures with temperature;Applied Optics;2011-10-07
2. Fundamental and Dynamic Properties of Intermixed InGaAs-InGaAsP Quantum-Well Lasers;IEEE Journal of Quantum Electronics;2010-09
3. Analytical expressions for asymmetric double quantum wells and their application to semiconductor heterostructures;Philosophical Magazine;2006-11-24
4. The effect of potential fluctuations on the optical properties of InGaAs∕InGaAlAs single and coupled double quantum wells;Journal of Applied Physics;2006-09
5. Study of luminescence due to delocalized exciton recombination in asymmetric-coupled quantum well structure based on Ξ-type configuration;Acta Physica Sinica;2004
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