Thermal stability of InP-based high electron mobility transistor epitaxial wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1560572
Reference20 articles.
1. 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
2. Low-Noise Bias Reliability of AlInAs/GaInAs Modulation-Doped Field Effect Transistors with Linearly Graded Low-Temperature Buffer Layers Grown on GaAs Substrates
3. Hydrogen-induced piezoelectric effects in InP HEMT's
4. Effect of atmosphere on reliability of passivated 0.15 [micro sign]m InAlAs/InGaAs HEMTs
5. Reliability study on InAlAs/InGaAs HEMTs with an InP recess-etch stopper and refractory gate metal
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1. GaAs- and InP-based high electron mobility transistors;Reference Module in Materials Science and Materials Engineering;2024
2. Through-Glass-Via Based Microstrip Band-Pass Filters Fabricated with Wafer-Level Low-Melting-Point Alloy Micro-Casting;IEEE Electron Device Letters;2020
3. Determination of spin-orbit coefficients in semiconductor quantum wells;Physical Review B;2011-03-07
4. Investigations on InP/InAlAsSb/GaAs Metamorphic High Electron Mobility Transistors with a Dual-Composition-Graded InxGa1−xAs1−ySby Channel and Different Schottky-Barrier Gate Structures;Journal of The Electrochemical Society;2011
5. GaAs- and InP-Based High-Electron-Mobility Transistors;Comprehensive Semiconductor Science and Technology;2011
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