Hydrogen-induced piezoelectric effects in InP HEMT's-Reference-Cited by-同舟云学术

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Hydrogen-induced piezoelectric effects in InP HEMT's

Published:1999-08 Issue:8 Volume:20 Page:393-395
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Blanchard R.R.,del Alamo J.A.,Adams S.B.,Chao P.C.,Cornet A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/16900/00778153.pdf?arnumber=778153

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes;Physica Scripta;2024-07-25

2. Effect of Hydrogen on Electrical Performance of Pt/Au β-Ga₂O₃ (001) Schottky Barrier Diodes;IEEE Transactions on Electron Devices;2023-05

3. Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs;IEEE Transactions on Nuclear Science;2021-06

4. Towards Understanding the Interaction Between Hydrogen Poisoning and Bias Stress in AlGaN/GaN MIS-HEMTs With SiNx Gate Dielectric;IEEE Electron Device Letters;2021-02

5. The Role of Piezoeffect in Anomalous Dependence of the Conductivity of AlGaAs/GaAs Heterostructure with a Two-Dimensional Electron Gas on the Distance between Contacts;Technical Physics Letters;2020-01

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