Diffusion of In and Ga in TiN/HfO2/InGaAs nanofilms
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4824468
Reference20 articles.
1. Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors
2. Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation
3. Study on Thermal Stability of Plasma-PH[sub 3] Passivated HfAlO/In[sub 0.53]Ga[sub 0.47]As Gate Stack for Advanced Metal-Oxide-Semiconductor Field Effect Transistor
4. Mass transport and thermal stability of TiN/Al2O3/InGaAs nanofilms
5. Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO$_{2}$ on n-InAs/InGaAs Metal–Oxide–Semiconductor Capacitors
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