High-k Integration and Interface Engineering for III-V MOSFETs
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Published:2011-04-25
Issue:4
Volume:35
Page:481-495
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Oh H. J.,Sumarlina A. B.,Lee Sungjoo
Abstract
We report the comprehensive study of performance enhancement of InGaAs n-MOSFET by plasma PH3 passivation. The calibrated plasma PH3 passivation of the InGaAs surface before CVD high-k dielectric deposition significantly improves interface quality, resulting in suppressed frequency dispersion in C-V, increase in drive-current with high electron mobility, and excellent thermal stability.
Publisher
The Electrochemical Society