Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3-Reference-Cited by-同舟云学术

Deep level transient spectroscopy investigation of ultra-wide bandgap (2̄01) and (001) β-Ga2O3

Published:2020-11-28 Issue:20 Volume:128 Page:205701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Montes Jossue¹^ORCID,Kopas Cameron¹^ORCID,Chen Hong¹^ORCID,Huang Xuanqi¹^ORCID,Yang Tsung-han¹^ORCID,Fu Kai¹^ORCID,Yang Chen¹^ORCID,Zhou Jingan¹^ORCID,Qi Xin¹^ORCID,Fu Houqiang²^ORCID,Zhao Yuji¹^ORCID

Affiliation:

1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA

2. Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011, USA

Funder

Defense Threat Reduction Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0021859

Reference29 articles.

1. Fabrication, Characterization and Cytotoxicity of Spherical-Shaped Conjugated Gold-Cockle Shell Derived Calcium Carbonate Nanoparticles for Biomedical Applications

2. A review of Ga2O3materials, processing, and devices

3. Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction

4. Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching

5. Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics

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