Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction
Author:
Affiliation:
1. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85281, USA
Funder
NASA
Advanced Research Projects Agency - Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5088516
Reference42 articles.
1. Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nanobelt/p-Si substrate heterojunction
2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films
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4. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases
5. Perspective—Opportunities and Future Directions for Ga2O3
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