Oxidation and reduction behavior of Ge/Si islands
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1517715
Reference8 articles.
1. Oxidation of Si1−xGexalloys at atmospheric and elevated pressure
2. Effects of Ge concentration on SiGe oxidation behavior
3. Diffusion versus oxidation rates in silicon‐germanium alloys
4. Unimodal dome-shaped island population of Ge/Si by step-wise growth in UHV-CVD
5. Growth and characterization of self-assembled Ge-rich islands on Si
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3. Chemical states and photoluminescence of Si0.3Ge0.7-nitride film formed by N2+ gas;Applied Physics Letters;2011-09-19
4. The trapping of N2 molecules and the reduction in its bonding length in Ge(001) due to N2+ ion implantation;Journal of Applied Physics;2011-06-15
5. Synthesis and electrical characterization of a MOS memory containing Si nanoparticles embedded in high-k HfO2thin film;Journal of Physics: Conference Series;2009-03-01
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