Chemical states and photoluminescence of Si0.3Ge0.7-nitride film formed by N2+ gas
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3641475
Reference19 articles.
1. Visible photoluminescence from nanocrystallite Ge embedded in a glassySiO2matrix: Evidence in support of the quantum-confinement mechanism
2. Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition
3. Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded inSiO2matrices
4. Memory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-k gate dielectric
5. Rapid-thermal-annealing effect on lateral charge loss in metal–oxide–semiconductor capacitors with Ge nanocrystals
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1. Pulsed-Mode MOCVD Growth of ZnSn(Ga)N2 and Determination of the Valence Band Offset with GaN;Crystal Growth & Design;2022-07-08
2. Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe)0.94Ga0.12N2 with GaN;Journal of Physics D: Applied Physics;2021-03-25
3. First-principles study on the electronic, elastic and thermodynamic properties of three novel germanium nitrides;Journal of Semiconductors;2016-07
4. Carrier trapping and confinement in Ge nanocrystals surrounded by Ge3N4;Scientific Reports;2016-05
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