Carrier trapping and confinement in Ge nanocrystals surrounded by Ge3N4
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep25449.pdf
Reference30 articles.
1. Lee, P. F. et al. Memory effect and retention property of Ge nanocrystal embedded Hf-aluminate high-k gate dielectric. Nanotechnology 17, 1202–1206 (2006).
2. Zheng, F. et al. Stress tuning of Ge nanocrystals embedded in dielectrics. J. Phys. Chem. C 112, 9223–9228 (2008).
3. Wang, Y. Q. et al. Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device. Appl. Phys. Lett. 84, 5407–5409 (2004).
4. Giri, P. K., Kesavamoorthy, R., Panigrahi, B. K. & Nair, K. G. M. Evidence for fast decay dynamics of the photoluminescence from Ge nanocrystals embedded in SiO2 . Solid State Comm. 133, 229–234 (2005).
5. Jung, M.-C. et al. Spontaneous formation of Ge nanocrystals with the capping layer of Si3N4 by N2 + implantation and rapid thermal annealing. Thin Solid Film 518, 6010–6014 (2010).
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