Stress Tuning of Ge Nanocrystals Embedded in Dielectrics-Reference-Cited by-同舟云学术

Stress Tuning of Ge Nanocrystals Embedded in Dielectrics

Published:2008-05-29 Issue:25 Volume:112 Page:9223-9228
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Zheng F.¹,Choi W. K.¹,Lin F.¹,Tripathy S.¹,Zhang J. X.¹

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore, Institute of Material Research and Engineering, 3 Research Link, Singapore 117602, Singapore, and Department of Material Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576, Singapore

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp801529j

Reference40 articles.

1. Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

2. Germanium diffusion and nanocrystal formation in silicon oxide on silicon substrate under rapid thermal annealing

3. Crystal orientation-ordered ZnS nanobelt quasi-arrays and their enhanced field-emission

4. Ultrafine ZnS Nanobelts as Field Emitters

5. Synthesis of germanium nanocrystals in hafnium aluminum oxide matrix

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