In situ study of e-beam Al and Hf metal deposition on native oxide InP (100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4833569
Reference29 articles.
1. Nanometre-scale electronics with III–V compound semiconductors
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4. Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications
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1. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers;ACS Applied Electronic Materials;2023-02-09
2. Formation of HfOxNy nanorod GLAD films growth by rapid thermal oxidation;Vacuum;2023-01
3. Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers;ACS APPL ELECTRON MA;2023
4. Unusual oxidation-induced core-level shifts at the HfO2/InP interface;Scientific Reports;2019-02-06
5. Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates;ACS Applied Materials & Interfaces;2017-05-15
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