III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3638474
Reference18 articles.
1. High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm
2. High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics
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2. GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer;IEEE Transactions on Electron Devices;2018-01
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