Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, The University of Hong Kong; Pokfulam Road Hong Kong
2. School of Optical and Electronic Information, Huazhong University of Science and Technology; Wuhan 430074 P. R. China
Funder
University of Hong Kong
National Natural Science Foundation of China
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science
Reference31 articles.
1. Studies on Al/ZrO2/GaAs metal-oxide-semiconductor capacitors and determination of its electrical parameters in the frequency range of 10 kHz–1 MHz
2. III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation
3. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
4. Effective reduction of interfacial traps in Al2O3/GaAs (001) gate stacks using surface engineering and thermal annealing
5. Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
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1. Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications;IEEE Transactions on Electron Devices;2019-07
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4. Comparative passivation effect of ALD-driven HfO2 and Al2O3 buffer layers on the interface chemistry and electrical characteristics of Dy-based gate dielectrics;Journal of Materials Chemistry C;2019
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