Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3701584
Reference17 articles.
1. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
2. InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS
3. Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
4. GaAs metal-oxide-semiconductor devices with a complex gate oxide composed of SiO2and GaAs oxide grown using a photoelectrochemical oxidation method
5. Increase in electron mobility of InGaAs/InP composite channel high electron mobility transistor structure due to SiN passivation
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