Author:
Hong M.,Kwo J.,Lin T.D.,Huang M.L.
Abstract
AbstractAn overview is given on scientific and device advances for InGaAs metal oxide semiconductor heterostructures and inversion channel metal oxide semiconductor field-effect transistors (MOSFETs), with emphasis on results using ultrahigh vacuum-deposited Ga2O3(Gd2O3) [GGO] as high-κ dielectrics. Regardless of the approaches used to deposit high-κ dielectrics on InGaAs, critical material and electrical parameters of fabricating inversion channel InGaAs MOSFETs must be ready for complementary MOS technology beyond the 16-nm node, and some of these parameters have been achieved. These parameters include low interfacial density of states; low electrical leakage currents; high-temperature (800–900°C) thermal stability for high-κ dielectrics/InGaAs heterostructures, where the amorphous oxide structure and atomically smooth and sharp interfaces are retained; and oxide scalability with a capacitance equivalent thickness of ≤1 nm. Interfacial chemical properties and band parameters, which are important for device design in the high κs/InGaAs, have been thoroughly studied. Representative enhancement-mode InGaAs MOSFETs are compared and correlated with the interfacial structures. Deposition methods and electrical characteristics of high-κ dielectrics on InGaA are discussed. The inversion channel InGaAs MOSFETs of 0.4–1.0 μm gate length have exhibited excellent device performance in terms of drain current and transconductance.
Publisher
Springer Science and Business Media LLC
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science
Cited by
34 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献