Initial growth of Ga2O3(Gd2O3) on GaAs: Key to the attainment of a low interfacial density of states
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125730
Reference9 articles.
1. Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy
2. Low D/sub it/, thermodynamically stable Ga/sub 2/O/sub 3/-GaAs interfaces: fabrication, characterization, and modeling
3. Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide
4. Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
5. Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films
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