Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy-Reference-Cited by-同舟云学术

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Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy

Published:1996-05 Issue:3 Volume:14 Page:2297
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Hong M.

Publisher

American Vacuum Society

Subject

General Engineering

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