Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y<sub>2</sub>O<sub>3</sub>/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation-Reference-Cited by-同舟云学术

Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation

Published:2023-07-13 Issue:7 Volume:5 Page:3809-3816
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chen Wan-Sin¹^ORCID,Lin Keng-Yung¹^ORCID,Lin Yen-Hsun Glen¹,Wan Hsien-Wen¹,Young Lawrence Boyu¹^ORCID,Cheng Chiu-Ping²^ORCID,Pi Tun-Wen³,Kwo Jueinai⁴,Hong Minghwei¹

Affiliation:

1. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan

2. Department of Electrophysics, National Chiayi University, Chiayi 60004, Taiwan

3. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

4. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

Funder

Ministry of Science and Technology, Taiwan

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00528

Reference46 articles.

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