Enhanced Performance of GaAs Metal-Oxide-Semiconductor Capacitors Using a TaON/GeON Dual Interlayer

Abstract

In this work, a dual interfacial passivation layer (IPL) consisting of TaON/GeON is implemented in GaAs metal-oxide-semiconductor (MOS) capacitors with ZrTaON as a high-k layer to obtain superior interfacial and electrical properties. As compared to the samples with only GeON IPL or no IPL, the sample with the dual IPL of TaON/GeON exhibits the best performance: low interface-state density (1.31 × 1012 cm−2 eV−1), small gate leakage current density (1.62 × 10−5 A cm−2 at Vfb + 1 V) and large equivalent dielectric constant (18.0). These exceptional results can be attributed to the effective blocking action of the TaON/GeON dual IPL. It efficiently prevents the out-diffusion of Ga/As atoms and the in-diffusion of oxygen, thereby safeguarding the gate stack against degradation. Additionally, the insertion of the thin TaON layer successfully hinders the interdiffusion of Zr/Ge atoms, thus averting any reaction between Zr and Ge. Consequently, the occurrence of defects in the gate stack and at/near the GaAs surface is significantly reduced.