Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors-Reference-Cited by-同舟云学术

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Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors

Published:2014-12-14 Issue:22 Volume:116 Page:222207
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu C.¹,Zhang Y. M.¹,Zhang Y. M.¹,Lv H. L.¹

Affiliation:

1. School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China

Funder

Advance Research project of China

Doctoral Fund of Ministry of Education of China

National Basic Research Program of China

Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4902963

Reference36 articles.

1. High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

2. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric

3. Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

4. Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

5. Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

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1. Enhanced Performance of GaAs Metal-Oxide-Semiconductor Capacitors Using a TaON/GeON Dual Interlayer;Nanomaterials;2023-09-29

2. Effect of annealing temperature on interfacial and electrical performance of Au–Pt–Ti/HfAlO/InAlAs metal–oxide–semiconductor capacitor;Chinese Physics B;2020-08-01

3. Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices;Semiconductor Science and Technology;2019-02-22

4. Study on the Physical and Leakage Current Characteristics of an Optimized High-k/InAlAs MOS Capacitor with a HfO2–Al2O3 Laminated Dielectric;Coatings;2018-11-22

5. The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies;Physics of the Solid State;2018-10

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