High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2358202
Reference16 articles.
1. Status of the GaAs metal—oxide—semiconductor technology
2. Oxide/III-V Compound Semiconductor Interfaces
3. Effects of passivating ionic films on the photoluminescence properties of GaAs
4. Control of GaAs and InGaAs Insulator-Semiconductor and Metal-Semiconductor Interfaces by Ultrathin Molecular Beam Epitaxy Si Layers
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2. Sacrificial Self-Assembled Monolayers for the Passivation of GaAs (100) Surfaces and Interfaces;Chemistry of Materials;2016-08-05
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4. Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors;Journal of Applied Physics;2014-12-14
5. Materials for organic and hybrid inorganic/organic electronics;MRS Bulletin;2010-12
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