Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution-Reference-Cited by-同舟云学术

Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Lin D.,Brammertz G.,Sioncke S.,Fleischmann C.,Delabie A.,Martens K.,Bender H.,Conard T.,Tseng W. H.,Lin J. C.,Wang W. E.,Temst K.,Vatomme A.,Mitard J.,Caymax M.,Meuris M.,Heyns M.,Hoffmann T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424359.pdf?arnumber=5424359

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantization Effect in N-Channel Inversion Mode Si, In0.53Ga0.47As and Ge Based Double Gate MOSFET Using Quasi-Static Capacitance–Voltage Characteristics for Upcoming Sub 10 nm Technology Node;Silicon;2024-03-01

2. GaAs MOSFETs with in situ Y₂O₃ dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation;Japanese Journal of Applied Physics;2023-12-01

3. Ultrahigh Vacuum Annealing of Atomic-Layer-Deposited Y₂O₃/GaAs in Perfecting Heterostructural Chemical Bonding for Effective Passivation;ACS Applied Electronic Materials;2023-07-13

4. Improvement in the Performance of III-V Channel Based Ultra-Thin Junction-Less-Hybrid CMOS Circuits with Mixed Mode Analysis;ECS Journal of Solid State Science and Technology;2022-05-01

5. Comparative performance investigation of silicon and germanium junctionless VSTB FET including architectural stress–strain influence;Applied Physics A;2022-01-15