GaAs metal-oxide-semiconductor devices with a complex gate oxide composed of SiO2and GaAs oxide grown using a photoelectrochemical oxidation method
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition
2. GaAs MOS capacitors with photo-CVD SiO2 insulator layers
3. Structure of epitaxial Gd2O3 films and their registry on GaAs(100) substrates
4. Growth of GaAs Oxide Layer Using Photoelectrochemical Method
5. GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. III-As heterostructure field-effect transistors with recessed ex-situ gate oxide by O2 plasma-oxidized GaAs cap;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-01
2. GaAs-based metal-oxide-semiconductor field-effect transistor with aluminum oxide gate insulator preparedin situby MOCVD;Semiconductor Science and Technology;2012-09-26
3. Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition;Applied Physics Letters;2012-04-02
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