The role of ammonia in atomic layer deposition of tungsten nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2721118
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1. Effect of Annealing of Titanium Nitride on the Diffusion Barrier Property in Cu Metallization
2. Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization
3. A New Process for Depositing Tungsten Nitride Thin Films
4. Formation mechanism of ultrathin WSiN barrier layer in a W/WNx/Si system
5. New method to improve thermal stability in the interface of silicon and tungsten by the interposition of plasma deposited tungsten nitride thin film
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