Atomic Layer Deposition of Tungsten Oxide Using Nitrogen Dioxide: A Comparative Study with Other Oxygen Sources
Author:
Affiliation:
1. IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, United States
2. IBM Almaden Research Center, San Jose, California 95110, United States
Funder
International Business Machines Corporation
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.0c03928
Reference34 articles.
1. Highly Efficient Near Infrared Photothermal Conversion Properties of Reduced Tungsten Oxide/Polyurethane Nanocomposites
2. Ultrathin, Single-Crystal WO3 Nanosheets by Two-Dimensional Oriented Attachment toward Enhanced Photocatalystic Reduction of CO2 into Hydrocarbon Fuels under Visible Light
3. Tungsten Oxide-Based Semiconductor Sensor Highly Sensitive to NO and NO2
4. Development of high-performance supercapacitor electrodes using novel ordered mesoporous tungsten oxide materials with high electrical conductivity
5. Nanostructured WO3 thin film as a new anode material for lithium-ion batteries
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1. Facile synthesis of M(=N Bu)2(CH2SiMe3)2 (M = Mo or W) as potential precursors for thin film deposition;Inorganic Chemistry Communications;2023-05
2. Plasma-enhanced atomic layer deposition of WO3-SiO2 films using a heteronuclear precursor;Journal of Vacuum Science & Technology A;2023-01
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