New method to improve thermal stability in the interface of silicon and tungsten by the interposition of plasma deposited tungsten nitride thin film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111068
Reference12 articles.
1. Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications
2. Factors Affecting the Encroachment of Tungsten into the Si / SiO2 Interface during the Reduction of Tungsten Hexafluoride by Silicon
3. Properties and microelectronic applications of thin films of refractory metal nitrides
4. Deposition of Titanilum Nitride Thin Films by Plasma Enhanced CVD and Reactive Sputtering
5. Preparation of Tungsten Nitride Film by CVD Method Using WF 6
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