ALD Precursors and Reaction Mechanisms-Reference-Cited by-同舟云学术

ALD Precursors and Reaction Mechanisms

Published:2013-10-19 Issue: Volume: Page:15-46
ISSN:
Container-title:Atomic Layer Deposition for Semiconductors
language:
Short-container-title:

Author:

Gordon Roy G.

Publisher

Springer US

Link

http://link.springer.com/content/pdf/10.1007/978-1-4614-8054-9_2

Reference99 articles.

1. Puurunen RL (2005) Surface chemistry of atomic layer deposition: a case study for the trimethylaluminum/water process. J Appl Phys 97:121–301

2. Niinistö J, Kukli K, Heikkilä M, Ritala M, Leskela M (2009) Atomic layer deposition of high-k oxides of the group 4 metals for memory applications. Adv Eng Mater 11:223

3. Ritala M, Niinisto J (2009) Chemical vapour deposition: precursors, processes and applications. Jones AC, Hitchman ML (eds). Royal Society of Chemistry, Cambridge

4. George SM (2010) Atomic layer deposition: an overview. Chem Rev 110:111

5. Ritala M, Niinisto J (2009) Industrial applications of atomic layer deposition. ECS Trans 25:641

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab Initio Prediction of Vapor Pressure for Diverse Atomic Layer Deposition Precursors;Journal of Chemical Theory and Computation;2024-07-11

2. Volatile and thermally stable tungsten organometallic complexes (RCp)W(CO)2(η3-2-tert-butylallyl) as potential thin film deposition precursor;Inorganica Chimica Acta;2024-07

3. A Brief Review on Commonly Used Metal ALD Precursors for Semiconductor from A Structural Chemistry Perspective;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

4. Synthesis, characterisation and reactivity of a zinc triazenide for potential use in vapour deposition;Dalton Transactions;2024

5. Fluorine-free Plasma Enhanced Atomic Layer Deposited Ultrathin Tungsten Nitride Thin Films for Dual Diffusion Barrier Performance;ACS Applied Nano Materials;2023-11-17