Absolute determination of the asymmetry of the in-plane deformation of GaAs (001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1650891
Reference20 articles.
1. Structural properties of partially relaxed InxGa1−xAs layers grown on (100) and misoriented GaAs substrates
2. Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces
3. Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers
4. Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate
5. Transmission electron microscopy study of In0.25Ga0.75As epilayers grown on GaAs (001) by molecular beam epitaxy: The effect of epilayer thickness
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