Transmission electron microscopy study of In0.25Ga0.75As epilayers grown on GaAs (001) by molecular beam epitaxy: The effect of epilayer thickness
-
Published:1995-05
Issue:3
Volume:13
Page:967
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:
-
Short-container-title:J. Vac. Sci. Technol. B
Author:
Edirisinghe S. P.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献