Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109213
Reference8 articles.
1. Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
2. Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001)
3. Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system
4. Like‐sign asymmetric dislocations in zinc‐blende structure
5. Impurity effects on the generation, velocity, and immobilization of dislocations in GaAs
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3. Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates;Chinese Physics B;2017-03
4. The effects of Ga incorporation on the crystalline quality of AlInAs metamorphic buffer using x-ray characterization;SPIE Proceedings;2016-09-27
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