Growth mode and strain relaxation during the initial stage of InxGa1−xAs growth on GaAs(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107379
Reference13 articles.
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4. Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)]
5. Erratum: Relaxation of strained‐layer semiconductor structures via plastic flow [Appl. Phys. Lett. 51, 1325 (1987)]
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