Effect of GaAs substrate misorientation on In Ga1−As crystalline quality and photovoltaic performance-Reference-Cited by-同舟云学术

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Effect of GaAs substrate misorientation on In Ga1−As crystalline quality and photovoltaic performance

Published:2010-10 Issue:24 Volume:518 Page:7213-7217
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Tseng Ming-Chun,Horng Ray-Hua,Wuu Dong-Sing,Tsai Yu-Li,Kuo Chia-Hao,Lin Snin-Nan,Yu Hsin Her

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. MOCVD growth of strain-compensated multi-quantum wells light emitting diode

2. Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

3. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

4. On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

5. 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures;Materials Science in Semiconductor Processing;2020-12

2. Effect of Si and Zn doping on surface defects in AlGaInAs compositionally graded buffer by MOCVD;Japanese Journal of Applied Physics;2020-02-01

3. Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates;Applied Surface Science;2014-01

4. Effects of substrate miscut on dislocation glide in metamorphic (Al)GaInP buffers;Journal of Crystal Growth;2013-10

5. Effect of Crystalline Quality on Photovoltaic Performance for ${\rm In}_{0.17}{\rm Ga}_{0.83}{\rm As}$ Solar Cell Using X-Ray Reciprocal Space Mapping;IEEE Journal of Quantum Electronics;2011-11

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