Effects of substrate miscut on dislocation glide in metamorphic (Al)GaInP buffers-Reference-Cited by-同舟云学术

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Effects of substrate miscut on dislocation glide in metamorphic (Al)GaInP buffers

Published:2013-10 Issue: Volume:380 Page:261-267
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Li K.L.,Sun Y.R.,Dong J.R.,Zhao Y.M.,Yu S.Z.,Zhao C.Y.,Zeng X.L.,Yang H.

Funder

National Basic Research Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Visible light-emitting diodes grown on optimized ∇x[InxGa1−x]P/GaP epitaxial transparent substrates with controlled dislocation density

2. Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

3. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

4. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

5. Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Si and Zn doping on surface defects in AlGaInAs compositionally graded buffer by MOCVD;Japanese Journal of Applied Physics;2020-02-01

2. Improved quality of InP layer on GaAs substrates by using compositionally modulated step-graded AlGaInAs buffers;Journal of Materials Science: Materials in Electronics;2019-08-08

3. Influence of GaAs substrate misorientation on the characteristics in undulating compositional step-graded AlGaInAs buffers;Journal of Materials Science: Materials in Electronics;2019-04

4. Anisotropic distribution of dislocations density in tensile strained GaP/GaAs epilayers;Vacuum;2018-08

5. Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers;Journal of Crystal Growth;2018-08

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