Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1946194
Reference33 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Electrical characterization of GaN p-n junctions with and without threading dislocations
3. High indium metamorphic HEMT on a GaAs substrate
4. Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy
5. Efficiency calculations of thin‐film GaAs solar cells on Si substrates
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