Effect of Si and Zn doping on surface defects in AlGaInAs compositionally graded buffer by MOCVD
Author:
Funder
Zhongshan Municipal Innovative R&D Team Project.
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab6b6f/pdf
Reference49 articles.
1. Strain relaxation and mosaic structure in relaxed SiGe layers
2. Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates
3. Low-Temperature and Metamorphic Buffer Layers
4. Dynamic behavior of dislocations in InAs: In comparison with III–V compounds and other semiconductors
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1. Surface morphology improvement by diethylzinc doping on metamorphic InAs on GaAs using MOVPE;Journal of Crystal Growth;2023-09
2. Effects of Zn diffusion in tunnel junction and its solution for high efficiency large area flexible GaInP/GaAs/InGaAs tandem solar cell;Solar Energy Materials and Solar Cells;2021-09
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